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| 7MBP 50RA-120 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode Collector Power Dissi. DB One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 50 100 50 400 25 50 25 198 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 Units IGBT IPM 1200V 6x50A+Chopper n Outline Drawing Min. 0 0 200 0 V A W A W V mA V mA C V Nm Note: *1: Recommendable Value; 2.5 3.0 Nm (M5) * Electrical Characteristics of Power Circuit ( at Tj=25C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=50A -IC=50A VCE=1200V, Input Terminal Open IC=25A -IC=25A Min. Typ. Max. 1.0 2.6 3.0 1.0 2.6 3.3 Units mA V V mA V V DB * Electrical Characteristics of Control Circuit ( at Tj=25C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100C fSW=0~15kHz, TC=-20~100C On Off RIN=20k VDC=0V, IC=0A, Case Temp. Surface Of IGBT Chip Tj=125C Tj=125C Tj=25C Min. 3 10 1.00 1.25 110 20 150 20 75 38 1.5 1425 11.0 0.2 10 2 1500 A s ms V Typ. Max. 18 65 1.70 1.95 125 C Units mA V 1.35 1.60 8.0 1575 12.5 * Dynamic Characteristics ( at TC=Tj=125C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=600V IF=50A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Units s 7MBP 50RA-120 * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. IGBT IPM 1200V 6x50A+Chopper Typ. Max. 0.31 0.70 0.63 Units C/W 0.05 n Equivalent Circuit Drivers include following functions A Short circuit protection circuit A Amplifier for driver A Undervoltage protection circuit A Overcurrent protection circuit A IGBT Chip overheating protection 7MBP 50RA-120 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage 50 T j=25C 50 IGBT IPM 1200V 6x50A+Chopper C o llector Current vs. Collector-Emitter Voltage T j= 1 2 5 C [A] C Collector Current : I C [A] 40 V C C =17V,15V, 13V 40 V C C =17V,15V, 13V Collector Current : I 30 30 20 20 10 10 0 0,0 0,5 1,0 1,5 2,0 2,5 Collector-Emitter Voltage : V C E [V] 3,0 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 C o llector-Em itter Voltage : V C E [V] Transient Thermal Resistance 10 [C/W] 0 Reverse Biased Safe Operating Area 350 300 V C C =15V, T j<125C IGBT C SCSOA (non-repetitive pulse) th(j-c) Thermal Resistance : R [A] 250 200 150 100 50 0 10 -1 Collector Current : I RBSOA (repetitive pulse) 10 -2 10 -3 10 -2 10 -1 10 0 0 200 400 600 800 1000 1200 1400 Pulse Width : P W [sec] Collector-Emitter Voltage : V C E [V] Power Derating For IGBT 250 (per device) Over Current Protection vs. Junction Temperature 120 oc V cc =15 V [W] [A] 200 100 C Over Current Protection Level : I 0 20 40 60 80 100 120 140 160 Collector Power Dissipation : P 80 150 60 100 40 50 20 0 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] Case Temperature : T C [C] 7MBP 50RA-120 n Control Circuit Power Supply Current vs. Switching Frequency 40 T j=100C V CC= 1 7 V V CC= 1 3 V 2,5 IGBT IPM 1200V 6x50A+Chopper Input Signal Threshold Voltage vs. Power Supply Voltage T j=25C 2,0 T j=125C V in(off) 1,5 V in(on) [mA] 35 N-Side 30 25 20 15 10 5 0 0 5 10 15 P-Side V CC= 1 5 V Input Signal Threshold Voltage CC Power Supply Current : I : V in(on) , V in(off) [V] 1,0 V C C= 1 7 V V C C= 1 5 V V C C= 1 3 V 0,5 20 25 0,0 12 13 14 15 16 17 18 S w itching Frequency : fsw [kHz] Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 14 [V] 12 [V] 10 8 6 4 2 0 20 1,0 Under Voltage Hysterisis vs. Junction Temperature 0,8 Under Voltage Hysterisis : V 40 60 80 100 120 Junction Temperature : T j [C] 140 UV H Under Voltage : V 0,6 0,4 0,2 0,0 20 40 60 80 100 120 Junction Temperature: Tj [C] 140 Alarm Hold Time vs. Power Supply Voltage 3,0 , T jOH [C] cH , T jH [C] Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc 200 [ms] 2,5 T j=125C 2,0 T j=25C 1,5 T jOH 150 ALM Over Heating Protection : T Alarm Hold Timen : t cOH Over Heating Hysterisis : T T cOH 100 1,0 50 0,5 T cH ,T jH 0 12 13 14 15 16 17 18 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [V] Power Supply Voltage : V cc [V] 7MBP 50RA-120 n Inverter C o llector Current vs. Collector-Emitter Voltage 100 T j= 2 5 C IGBT IPM 1200V 6x50A+Chopper Collector Current vs. Collector-Emitter Voltage 100 T j=125C V C C =17V,15V, 13V V C C =17V,15V, 13V [A] C Collector Current : I C [A] 80 80 Collector Current : I 60 60 40 40 20 20 0 0 1 2 3 4 C o llector-Em itter Voltage : V C E [V] 0 0 1 2 3 4 Collector-Emitter Voltage : V C E [V] Switching Time vs. Collector Current 10000 V D C =600V, V C C =15V, T j=25C 10000 Switching Time vs. Collector Current V D C =300V, V C C =15V, T j=125C t off , t r, t off , t f [ns] t on 1000 t off , t r, t off , t f [ns] t on 1000 on Switching Time : t Switching Time : t on tf 100 100 tf 10 0 20 40 60 80 C o llector Current : I C [A] 10 0 20 40 60 80 C o llector Current : I C [A] Forward Voltage vs. Forward Current 80 1000 Reverse Recovery Characteristics trr, Irr vs. I F 70 [A] 60 50 40 30 20 10 0 0,0 [ns] rr T j=125C 25C F Reverse Recovery Current : I rr [A] Reverse Recovery Time : t Forward Current : I trr=125C 100 trr=25C Irr=125C Irr=25C 10 0 10 20 30 40 50 60 70 80 Forward Current : I F [A] 0,5 1,0 1,5 2,0 2,5 3,0 Forward Voltage : V F [V] 7MBP 50RA-120 n Inverter Transient Thermal Resistance 10 [C/W] 0 IGBT IPM 1200V 6x50A+Chopper Reverse Biased Safe Operating Area 700 600 V C C =15V, T j<125C FWD [A] SCSOA (non-repetitive pulse) th(j-c) 500 400 300 200 100 0 0 200 Thermal Resistance : R IGBT 10 -1 Collector Current : I C RBSOA (repetitive pulse) 10 -2 400 600 800 1000 1200 1400 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Collector-Emitter Voltage : V C E [V] Power Derating For IGBT 400 (per device) 200 Power Derating For FWD (per device) [W] C C [W] 300 150 Collector Power Dissipation : P Collector Power Dissipation : P 200 100 100 50 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature : T C (C) Case Temperature : T C (C) S w itching Loss vs. Collector Current 25 V D C =600V, V C C =15V, T j=25C Switching Loss vs. Collector Current 25 V D C =600V, V C C =15V, T j=125C E on 20 20 , E off , E rr [mJ/cycle] Switching Loss : E on , E off , E rr [mJ/cycle] 15 E on 10 E off 5 E rr 0 0 10 20 30 40 50 60 70 80 Collector Current : I C [A] 15 Switching Loss : E on 10 E off 5 E rr 0 0 10 20 30 40 50 60 70 80 7MBP 50RA-120 n Inverter Over Current Protection vs. Junction Temperature 280 240 V cc =15 V IGBT IPM 1200V 6x50A+Chopper Over Current Protection Level : I oc [A] 200 160 120 80 40 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] n Outline Drawing Weight: 440g Specification is subject to change without notice October 98 |
Price & Availability of 7MBP50RA-120
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